Semiconductors R&D AND investigation
We support our partners in delivering breakthrough technologies by enabling deep, atomic-scale insight and precision modifications in semiconductors, ICs, and MEMS, and turning this information into actionable engineering decisions that accelerate innovation and raise reliability.
Strict IP protection
2 weeks turnaround time
Direct access to engineers
Possibility to participate in research (online/on-site)
THE CHALLENGE OF MINIATURIZATION
Semiconductor industry continues to develop and the state-of-the art semiconductor devices are not only getting smaller than their precursors, but also more complex. As a result, they require more sophisticated tools needed for development, prototyping, identification and control of defects, as well as making precise and high-resolution microscopic observations.
OUR SOLUTION
Our expertise combines three pillars that directly address these challenges:
- Atomic-scale analysis
- Micro- and nano-modifications
- Non-destructive inspection
Together, these methods enable faster development, reliable validation, and confident decision-making in semiconductor R&D.
GENERAL INSPECTIONS | CONFOCAL MICROSCOPY
- Non-destructive 3D surface metrology: submicron resolution measurements of geometry, step heights, and microstructures without damaging sensitive wafers or electronic components.
- Quantitative roughness analysis: nanometer-scale vertical sensitivity enables accurate Ra/Rz Sa/Sz roughness measurements across IC features, MEMS structures, and wafer surfaces.
- Defect and process monitoring: detection of microcracks, voids, inclusions, contamination, and coating anomalies (e.g., residues or blacktopping) critical for yield and reliability.
- High-throughput inspection: large-area 3D scans (100×100 mm) combined with precise nanometric Z-axis profiling.
Using confocal microscopy in the testing of integrated circuits (ICs) provides high-resolution imaging capabilities, precise depth profiling, and enhanced contrast, which are crucial for detailed inspection and analysis of ICs. Confocal microscopy is an invaluable tool in the testing and analysis of integrated circuits due to its ability to provide high-resolution images.
CT SCAN | uCT SCAN
- Non-Destructive Testing: CT scans allow for internal inspection of ICs without physically altering or damaging them. This is crucial for preserving the integrity of the components during analysis.
- Defect Identification: They can identify and characterize various types of defects such as voids, cracks, delaminations, and inclusions. This is essential for understanding failure mechanisms and improving manufacturing processes.
- Quality Control: CT scans help ensure that ICs meet quality standards by detecting defects early in the production process. This helps in maintaining high reliability and performance of electronic devices.
- Reverse Engineering: For competitive analysis or legacy system maintenance, CT scans can be used to reverse-engineer ICs by providing detailed insights into their internal structure and layout.
Using Computerized Tomography (CT) scans to examine integrated circuits (ICs) is important for several reasons, particularly in the context of quality control, failure analysis, and research and development of advanced electronics. CT scans are a powerful tool for examining integrated circuits, offering a non-destructive means to gain detailed internal insights. This technology enhances accuracy, efficiency, and reliability in the analysis and production of ICs, ultimately contributing to higher quality and performance in electronic devices.
SEM IMAGING
SEM microscopy offers unparalleled advantages for the testing and analysis of integrated circuits, providing high-resolution imaging, versatile signal detection, and detailed failure analysis capabilities. Its ability to deliver detailed surface and subsurface information, combined with non-destructive testing, makes SEM an essential tool in ensuring the quality, reliability, and performance of modern ICs.
Ga-FIB and Xe-PFIB CROSS SECTIONS
Focused Ion Beam (FIB):
- Nanometer-precision cross-sections: Enables highly localized material removal with beam spot sizes <10 nm.
- Defect and failure analysis: Ideal for isolating voids, delamination, electromigration damage, and gate oxide defects within integrated circuits.
- IC delayering and structure analysis: Controlled removal of individual layers in semiconductor devices to expose interconnects and transistor-level features.
- TEM lamella preparation: Accurate site-specific thinning of semiconductor regions for transmission electron microscopy at atomic resolution.
Plasma FIB (PFIB):
- High sputter yield: Up to 50× faster material removal compared to Ga-FIB, enabling rapid exposure of large-volume regions.
- Wide-area cross-sections: Suitable for package-level analysis, through-silicon vias (TSVs), solder bumps, underfills, and encapsulation layers.
- Low contamination & minimal implantation: Xe ions reduce gallium implantation effects, making PFIB better suited for sensitive materials and large-scale structures.
- Advanced packaging & MEMS inspection: Supports structural integrity studies of MEMS devices and heterogeneous integration processes.
Focused Ion Beam (FIB) systems use a finely focused beam of ions to mill, cross-section, or modify materials with nanometer precision. They are indispensable in semiconductor manufacturing, failure analysis, and IC/MEMS research, where access to subsurface structures without mechanical polishing is critical.
Plasma FIB (PFIB) is an evolution of this technique that replaces the conventional gallium ion source with a Xenon plasma source. This enables significantly higher ion currents and faster sputtering rates, making PFIB especially suitable for large-volume cross-sections and package-level investigations, while maintaining structural fidelity.
3D RECONSTRUCTIONS
Xe-PFIB enables rapid large-volume 3D reconstructions by sequentially milling and imaging device structures with high resolution. This technique reveals the full architecture of ICs, MEMS, and advanced packaging, exposing hidden defects and interfaces critical for failure analysis and R&D.
HYBRID CROSS-SECTIONING FEMTOSECOND LASER + Xe-PFIB
Femtosecond laser: Enables ultra-fast removal of bulk material and the creation of deep, wide trenches in a fraction of the time compared to ion beam milling alone. The non-thermal ablation minimizes mechanical stress and large-scale damage, making it suitable for packaging, wafers, and complex IC assemblies.
Xe-PFIB finishing: After bulk removal, the cross-section is refined with xenon plasma ions to achieve high-quality surfaces with reduced roughness and improved contrast, suitable for SEM/EDS analysis and 3D reconstructions.
Powerful approach for preparing cross-sections in semiconductor and electronics analysis combines femtosecond laser ablation with Xe-PFIB polishing.
This hybrid workflow combines the speed and depth capability of femtosecond laser processing with the precision and surface quality of Xe-PFIB, enabling large cross-sections to be prepared efficiently while maintaining analytical accuracy.
FIB CIRCUIT EDIT and FIBID
Cutting Paths Across Layers: Precise disconnection without a costly mask respin. FIB path cutting enables selective disconnection of signals at chosen metal or semiconductor levels, with nanometer accuracy. By working directly on the finished device, design hypotheses can be validated within hours instead of weeks, avoiding the expense and delay of new mask sets.
FIBID Platinum Path Connection: Bridge, reroute, restore functionality. Through platinum deposition, FIB creates micro-bridges and new connections between nodes, even across complex topography. This provides stable conductive paths that allow engineers to reroute signals or repair open circuits with unmatched flexibility.
Surface Delayering: Controlled access to covered device layers. FIB enables planar, layer-by-layer removal of metal and dielectric films. This method cleanly exposes specific layers, preparing sites for edits or inspection while preserving adjacent structures.
Probe Pad Creation: Enabling electrical access where you need it. FIB can create or expose probe pads by removing dielectric layers and depositing conductive pathways to the surface, giving reliable access points for electrical probing and functional verification directly on wafer.
FIB circuit edit is a set of precision techniques that allows direct modifications on functional integrated circuits. Instead of committing to costly and time-consuming mask re-spins, engineers can cut, connect, reroute, and access signals with nanometer accuracy, validating design changes in a matter of hours.
UHR TEM
UHRTEM allows for direct imaging of the internal structure of semiconductor materials at atomic resolution.
- High-resolution imaging to analyze defects, interfaces, and crystallographic orientation.
- Elemental mapping and composition analysis via EDS.
- Crystallographic phase identification using SAED.
Elemental Composition Energy Dispersive Spectroscopy (EDS) integrated with TEM enables precise elemental analysis by detecting X-ray emissions from the sample.
- Identifying dopant distribution in semiconductor materials.
- Detecting contamination or unintended elements.
- Understanding diffusion processes at interfaces.
Crystallographic Analysis Selected Area Electron Diffraction (SAED) is a tool for investigating the crystallographic structure of semiconductor lamellae.
- Determination of grain orientation and phase identification.
- Detection of strain and defects in crystal structures.
- Correlation between microstructure and electronic properties.
Transmission Electron Microscopy (TEM), along with Energy Dispersive Spectroscopy (EDS) and Selected Area Electron Diffraction (SAED), provides unparalleled insight into the properties of semiconductor lamellae. Our facility offers comprehensive sample preparation using both Gallium Focused Ion Beam (Ga-FIB) and Xenon Plasma Focused Ion Beam (Xe-PFIB) techniques, followed by Ultra-High Resolution Transmission Electron Microscopy (UHRTEM) analysis.
A DEMO DAY ON YOUR OWN SAMPLES AND CREATE YOUR RESEARCH PLAN WITH US
The best way to verify our methods is to see the results from your own sample. Apply for a free demonstration session and see the quality of our work